Onsemi has introduced its new Vertical GaN (vGaN) power semiconductor technology, which utilizes a GaN-on-GaN substrate to create Junction Field-Effect Transistors (JFETs). This architecture enables current to flow vertically through the chip, a key difference from conventional lateral GaN devices that use silicon or sapphire substrates and a horizontal current path.

The vGaN devices are designed for high-power applications, capable of handling voltages of 1200 V and higher, and feature robust edge termination for full avalanche capability. Onsemi highlights that this vertical structure leads to higher power density, greater efficiency from low on-resistance, and superior thermal performance compared to lateral GaN. These device-level improvements are intended to enable more compact and efficient power systems for applications such as AI data centers, electric vehicle inverters, and renewable energy infrastructure. The components are currently sampling to early access customers.